h8s-2635 Renesas Electronics Corporation., h8s-2635 Datasheet - Page 916

• Manufacturer Part Number: h8s-2635
• Description: Renesas 16-bit Single-chip Microcomputer H8s Family/h8s/2600 Series
• Manufacturer: Renesas Electronics Corporation.

Section 21B ROM (H8S/2638 Group, H8S/2639 Group, H8S/2630 Group)
21B.14.1 Notes on Power-Down States
1. When the flash memory is in a power-down state, part or all of the internal power supply
2. In a power-down state, FLMCR1, FLMCR2, EBR1, EBR2, RAMER, and FLPWCR cannot be
21B.15 Flash Memory Programming and Erasing Precautions
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
programmer mode are summarized below.
Use the specified voltages and timing for programming and erasing: Applied voltages in
excess of the rating can permanently damage the device. Use a PROM programmer that supports
the Renesas microcomputer device type * with 256-kbyte and 512-kbyte on-chip flash memory.
Only use the specified socket adapter. Failure to observe these points may result in damage to the
device.
Note: * The H8S/2638 and H8S/2639 are Renesas Technology microcomputer devices with 256
Powering on and off (see figures 21B-26 to 21B-28): Do not apply a high level to the FWE pin
until V
When applying or disconnecting V
the hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a power
failure and subsequent recovery.
Rev. 6.00 Feb 22, 2005 page 856 of 1484
REJ09B0103-0600
circuitry is halted. Therefore, a power supply circuit stabilization period must be provided
when returning to normal operation. When the flash memory returns to its normal operating
state from a power-down state, bits STS2 to STS0 in SBYCR must be set to provide a wait
time of at least 20 µs (power supply stabilization time), even if an oscillation stabilization
period is not necessary.
read from or written to.
CC
kbytes of on-chip flash memory. The H8S/2630 is a Renesas microcomputer device with
512 kbytes of on-chip flash memory (The H8S/2630 has 384 kbytes of PROM. The area
from H'60000 to H'7FFFF should be programmed as H'FF).
has stabilized. Also, drive the FWE pin low before turning off V
CC
power, fix the FWE pin low and place the flash memory in
CC
.