mt46h32m16lf Micron Semiconductor Products, mt46h32m16lf Datasheet - Page 83

• Manufacturer Part Number: mt46h32m16lf
• Description: 512mb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Revision History
Commands, Operations, and Timing Diagrams
Update . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5/08
Update . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3/08
Update . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12/07
PDF: 09005aef82ce3074/Source: 09005aef82ce20c9
ddr_mobile_sdram_cmd_op_timing_dia_fr3.08_rev_hist__5.fm - Rev. D 05/08 EN
• Updated I
• Added “L” low-power option
• Table 9: “I
• Table 10: “Electrical Characteristics and Recommended AC Operating Conditions,” on
• “Functional Description,” on page 27, Figure 18: “Extended Mode Register,” on
• Table 19, “Burst Definition Table,” on page 43: Added BL 16 content.
• “Output Drive Strength” on page 45: Added three-quarter drive strength and deleted
• Figure 18: “Extended Mode Register,” on page 46: Removed E7 column and updated
• Updated note 2:
• Updated note 3:
• Removed final note in each case. PENDING fross approval:
• Figure 42: “WRITE-to-PRECHARGE – Odd Number of Data, Interrupting,” on page 70:
• “Concurrent Auto Precharge” on page 71: Updated figure references.
• Figure 18: “Extended Mode Register,” on page 46: Updated to include mid-strength
• Figure 20: “Status Register Definition,” on page 48: Corrected headings for density.
– Table 7: “I
– Table 8: “I
– Figure 1: “512Mb Mobile DDR Part Numbering,” on page 5
– Table 9: “I
values as they are redundant and are shown in Figure 8: “Typical Idd6 Curves,” on
page 20
page 20:
– Changed the following specification:
– Removed note 21
page 46, and throughout document as appropriate: Added BL 16.
one-eighth drive strength. Updated to include 37 ohm (deleted 100 ohm).
valid column heading to E7–E0; expanded driver strength section to include three-
quarter drive strength.
– Figure 22: “Consecutive READ Bursts,” on page 51
– Figure 23: “Nonconsecutive READ Bursts,” on page 52
– Figure 24: “Random READ Accesses,” on page 53
– Figure 25: “Terminating a READ Burst,” on page 54
– Figure 27: “READ-to-PRECHARGE,” on page 56
– Figure 26: “READ-to-WRITE,” on page 55
– Figure 36: “Random WRITE Cycles,” on page 64:
– Figure 38: “WRITE-to-READ – Interrupting,” on page 66
– Figure 39: “WRITE-to-READ – Odd Number of Data, Interrupting,” on page 67
– Figure 41: “WRITE-to-PRECHARGE – Interrupting,” on page 69
Extended
driver information.
DD
t
DD
WR to coincide with T5 transition.
DD
DD
DD
6 Specifications and Conditions,” on page 19: Removed 70°C and 15°C
Values
6 Specifications and Conditions,” on page 19
Specifications and Conditions (x16),” on page 17
Specifications and Conditions (x32),” on page 18
83
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
RC -75 to 67.5ns.
Mobile DDR SDRAM
©2007 Micron Technology, Inc. All rights reserved
Revision History