mt46h32m16lf Micron Semiconductor Products, mt46h32m16lf Datasheet - Page 11

• Manufacturer Part Number: mt46h32m16lf
• Description: 512mb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Table 1:
PDF: 09005aef82d5d305/Source: 09005aef82d5d2e7
512mb_ddr_mobile_sdram_t47m_density__2.fm - Rev. D 05/08 EN
A7, B1, C9, D1, E9 A7, B1, C9, D1, E9,
60-Ball VFBGA
A3, B9, C1, E1
A9, F9, K9
A1, F1, K1
E8, E2
F3, F7
D9
–
VFBGA Ball Descriptions (continued)
L9, M1, N9, P1, R7
A3, B9, C1, E1, L1,
90-Ball VFBGA
M9, N1, P9, R3
L8, L2, E8, E2
A9, F1, R9
A1, F9, R1
D9
F7
F3
LDQS, UDQS
DQS0–DQS3
A13/DNU
Symbol
(60-ball)
(90-ball)
V
V
TEST
V
V
NC
DD
SS
DD
SS
Q
Q
Supply
Supply
Supply
Supply
Input
Input
Type
I/O
–
11
Data strobe: Output with read data, input with write
data. DQS is edge-aligned with read data, center-aligned
in write data. It is used to capture data.
DQ power supply.
DQ ground.
Power supply.
Ground.
No connect: F3 and F7 (60-ball) and F3 (90-ball) may be
left unconnected.
A13 if reduced page-size option, otherwise, do not use.
Test pin: Must be tied to V
operations.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x16, x32 Mobile DDR SDRAM
Ball Assignments and Descriptions
Description
SS
or V
©2004 Micron Technology, Inc. All rights reserved
SS
Q in normal