mt46h32m16lf Micron Semiconductor Products, mt46h32m16lf Datasheet - Page 66

• Manufacturer Part Number: mt46h32m16lf
• Description: 512mb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Figure 30:
PDF: 09005aef82ce3074/Source: 09005aef82ce20c9
ddr_mobile_sdram_cmd_op_timing_dia_fr3.08__3.fm - Rev. D 05/08 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
WRITE-to-READ – Interrupting
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. D
2. An interrupted burst of 4 is shown; two data elements are written.
3.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
5. DQS is required at T2 and T2n (nominal case) to register DM.
t
WTR is referenced from the first positive CK edge after the last data-in pair.
IN
D
b = data-in for column b; D
b
IN
NOP
D
T1
b
IN
b+1
D
D
b
IN
IN
T1n
b+1
D
IN
b+1
D
IN
NOP
T2
t
WTR
T2n
66
Bank a,
OUT
READ
Col n
T3
n = data-out for column n.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
T4
Don’t Care
CL = 3
CL = 3
CL = 3
T5
NOP
T5n
Transitioning Data
Mobile DDR SDRAM
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D
D
D
OUT
n
OUT
n
OUT
n
T6
NOP
D
n + 1
D
n + 1
D
n + 1
OUT
OUT
T6n
OUT
Operations