mt46h32m16lf Micron Semiconductor Products, mt46h32m16lf Datasheet - Page 37

• Manufacturer Part Number: mt46h32m16lf
• Description: 512mb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Table 5:
PDF: 09005aef82ce3074/Source: 09005aef82ce20c9
ddr_mobile_sdram_cmd_op_timing_dia_fr3.08__3.fm - Rev. D 05/08 EN
CKE
H
H
H
H
H
H
L
L
L
L
L
L
L
L
n - 1
CKE
H
H
H
H
H
H
L
L
L
L
L
L
L
L
Truth Table – CKE
Notes: 1–4
n
Notes:
(Precharge) power-down
(Precharge) power-down
Active power-down
Active power-down
Deep power-down
Deep power-down
Current State
Bank(s) active
All banks idle
All banks idle
All banks idle
Self refresh
Self refresh
1. CKE
2. Current state is the state of the DDR SDRAM immediately prior to clock edge n.
3. COMMAND
4. All states and sequences not shown are illegal or reserved.
5. DESELECT or NOP commands should be issued on any clock edges occurring during the
6. Upon exiting deep power-down mode, a full DRAM initialization sequence is required.
7. The clock must toggle at least two times during the
edge.
COMMAND
or
t
XSR period.
n
is the logic state of CKE at clock edge n
n
n
.
is the command registered at clock edge n
See Table 17 on page 35
See Table 17 on page 35
BURST TERMINATE
DESELECT or NOP
DESELECT or NOP
DESELECT or NOP
DESELECT or NOP
DESELECT or NOP
DESELECT or NOP
AUTO REFRESH
COMMAND
X
X
X
X
37
n
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; CKE
Maintain (precharge) power-down
n - 1
(Precharge) power-down entry
Exit (precharge) power-down
Maintain active power-down
Maintain deep power-down
Active power-down entry
Deep power-down entry
Exit active power-down
was the state of CKE at the previous clock
Exit deep power-down
t
Maintain self refresh
XSR period.
, and ACTION
Self refresh entry
Exit self refresh
ACTION
Mobile DDR SDRAM
©2007 Micron Technology, Inc. All rights reserved
n
n
is a
result of
Operations
Notes
5, 7
5
6
t
XP