mt46h32m16lf Micron Semiconductor Products, mt46h32m16lf Datasheet - Page 64

• Manufacturer Part Number: mt46h32m16lf
• Description: 512mb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Figure 27:
Figure 28:
PDF: 09005aef82ce3074/Source: 09005aef82ce20c9
ddr_mobile_sdram_cmd_op_timing_dia_fr3.08__3.fm - Rev. D 05/08 EN
Nonconsecutive WRITE-to-WRITE
Random WRITE Cycles
Notes:
Notes:
Command
1. D
2. An uninterrupted burst of 4 is shown.
3. Each WRITE command may be to any bank.
Command
1. D
2. b' (or x, n, a, g) = the next data-in following D
3. Programmed BL = 2, 4, 8, or 16 in cases shown.
4. Each WRITE command may be to any bank.
Address
Address
burst order.
IN
IN
DQS
DQS
CK#
CK#
DM
DM
DQ
DQ
CK
CK
b (n) = data-in for column b (n).
b (or x, n, a, g) = data-in for column b (or x, n, q, g).
WRITE
WRITE
Bank,
Col b
Bank,
Col b
T0
T0
t
t
DQSS (NOM)
DQSS (NOM)
WRITE
Bank,
Col x
D
NOP
D
T1
b
T1
b
IN
IN
64
T1n
T1n
D
b+1
D
b’
IN
IN
WRITE
Bank,
Col n
T2
D
NOP
b+2
T2
D
x
IN
IN
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T2n
T2n
D
b+3
D
x’
IN
IN
IN
b (x, n, a, g) according to the programmed
WRITE
WRITE
Bank,
Col a
D
Bank,
T3
Col n
T3
n
IN
Don’t Care
Don’t Care
T3n
D
n’
IN
WRITE
Bank,
T4
Col g
D
T4
NOP
D
a
Mobile DDR SDRAM
n
IN
IN
©2007 Micron Technology, Inc. All rights reserved
T4n
T4n
n+1
D
D
a’
IN
IN
Transitioning Data
Transitioning Data
D
T5
n+2
T5
D
NOP
g
NOP
Operations
IN
IN
T5n
T5n
D
n+3
D
g’
IN
IN