mt46h32m16lf Micron Semiconductor Products, mt46h32m16lf Datasheet - Page 73

• Manufacturer Part Number: mt46h32m16lf
• Description: 512mb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Figure 36:
PDF: 09005aef82ce3074/Source: 09005aef82ce20c9
ddr_mobile_sdram_cmd_op_timing_dia_fr3.08__3.fm - Rev. D 05/08 EN
Case 2:
Case 1:
Command
BA0, BA1
Address
t
t
AC (MAX) and
DQS
DQS
AC (MIN) and
DQ
DQ
CK#
CKE
A10
DM
CK
5
1
1
Bank Read – Without Auto Precharge
Notes:
t
t
IS
IS
NOP
T0
t
t
DQSCK (MIN)
DQSCK (MAX)
t
t
6
IH
IH
1. D
2. BL = 4 in the case shown.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T5.
5. PRE = PRECHARGE.
6. NOP commands are shown for ease of illustration; other commands may be valid at these
7. The PRECHARGE command can only be applied at T5 if
8. Refer to Figure 28 on page 57 and Figure 29 on page 58 for DQS and DQ timing details.
t
ACTIVE
IS
Bank x
t
IS
Row
times.
Row
T1
OUT
t
IH
t
IH
t
CK
n = data out from column n.
t
t
t
RCD
RAS
RC
NOP
7
T2
6
t
CH
t
CL
t
Bank x
READ
t
Note 3
IS
LZ (MIN)
Col n
T3
2
t
IH
73
CL = 2
t
RPRE
t
t
AC (MIN)
LZ (MIN)
NOP
T4
5
t
AC (MAX)
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D
t
OUT
RPRE
n
t
DQSCK (MIN)
One bank
All banks
Bank x
D
n + 1
PRE
OUT
T5
D
t
OUT
DQSCK (MAX)
n
7
4
D
n + 2
T5n
OUT
D
n + 1
OUT
t
D
n + 3
NOP
RAS (MIN) is met.
t
T6
OUT
RPST
D
n + 2
OUT
6
Transitioning Data
t
RP
T6n
t
HZ (MAX)
t
D
n + 3
RPST
Mobile DDR SDRAM
OUT
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NOP
T7
6
Operations
Don’t Care
ACTIVE
Bank x
Row
Row
T8