mt46h32m16lf Micron Semiconductor Products, mt46h32m16lf Datasheet - Page 30

• Manufacturer Part Number: mt46h32m16lf
• Description: 512mb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

READ
Figure 2:
WRITE
PDF: 09005aef82ce3074/Source: 09005aef82ce20c9
ddr_mobile_sdram_cmd_op_timing_dia_fr3.08__3.fm - Rev. D 05/08 EN
READ Command
Notes:
The READ command is used to initiate a burst read access to an active row. The values
on the BA0 and BA1 inputs select the bank; the address provided on inputs A0–Ai (where
i = the most significant column address bit for each configuration) selects the starting
column location. The value on input A10 determines whether auto precharge is used. If
auto precharge is selected, the row being accessed will be precharged at the end of the
READ burst; if auto precharge is not selected, the row will remain open for subsequent
accesses.
Address
1. EN AP = enable auto precharge; DIS AP = disable auto precharge.
The WRITE command is used to initiate a burst write access to an active row. The values
on the BA0 and BA1 inputs select the bank; the address provided on inputs A0–Ai (where
i = the most significant column address bit for each configuration) selects the starting
column location. The value on input A10 determines whether auto precharge is used. If
auto precharge is selected, the row being accessed will be precharged at the end of the
WRITE burst; if auto precharge is not selected, the row will remain open for subsequent
accesses. Input data appearing on the DQs is written to the memory array subject to the
DM input logic level appearing coincident with the data. If a given DM signal is regis-
BA0,1
CAS#
RAS#
WE#
A10
CKE
CK#
CS#
CK
HIGH
Column
DIS AP
Bank
EN AP
Don’t Care
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Mobile DDR SDRAM
©2007 Micron Technology, Inc. All rights reserved
Commands