mt46h32m16lf Micron Semiconductor Products, mt46h32m16lf Datasheet - Page 32

• Manufacturer Part Number: mt46h32m16lf
• Description: 512mb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Figure 4:
BURST TERMINATE
AUTO REFRESH
PDF: 09005aef82ce3074/Source: 09005aef82ce20c9
ddr_mobile_sdram_cmd_op_timing_dia_fr3.08__3.fm - Rev. D 05/08 EN
PRECHARGE Command
Notes:
BA0, BA1
1. If A10 is HIGH, bank address becomes “Don’t Care.”
The BURST TERMINATE command is used to truncate READ bursts with auto precharge
disabled. The most recently registered READ command prior to the BURST TERMINATE
command will be truncated, as described in “READs” on page 49. The open page from
which the READ was terminated remains open.
AUTO REFRESH is used during normal operation of the Mobile DDR SDRAM and is
analogous to CAS#-BEFORE-RAS# (CBR) REFRESH in FPM/EDO DRAMs. The AUTO
REFRESH command is nonpersistent and must be issued each time a refresh is required.
The addressing is generated by the internal refresh controller. This makes the address
bits a “Don’t Care” during an AUTO REFRESH command.
To allow for improved efficiency in scheduling and switching between tasks, some flexi-
bility in the absolute refresh interval is provided. The auto refresh period begins when
the AUTO REFRESH command is registered and ends
Address
RAS#
CAS#
WE#
CK#
CKE
A10
CS#
CK
HIGH
Single bank
All banks
Bank
Don’t Care
32
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
RFC later.
Mobile DDR SDRAM
©2007 Micron Technology, Inc. All rights reserved
Commands