mt46h32m16lf Micron Semiconductor Products, mt46h32m16lf Datasheet - Page 34

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mt46h32m16lf

Manufacturer Part Number
mt46h32m16lf
Description
512mb X16, X32 Mobile Ddr Sdram
Manufacturer
Micron Semiconductor Products
Datasheet

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Operations
Table 3:
PDF: 09005aef82ce3074/Source: 09005aef82ce20c9
ddr_mobile_sdram_cmd_op_timing_dia_fr3.08__3.fm - Rev. D 05/08 EN
Any
Idle
Row active
Read
(auto precharge
disabled)
Write
(auto precharge
disabled)
Current State
Truth Table – Current State Bank n – Command to Bank n
Notes: 1–6; notes appear below and on next page
Notes:
CS#
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
1. This table applies when CKE
2. This table is bank-specific, except where noted (for example, the current state is for a spe-
3. Current state definitions:
4. The following states must not be interrupted by a command issued to the same bank. COM-
RAS#
H
H
H
H
H
H
H
H
X
the previous state was self refresh), after
down, or a full initialization if the previous state was deep power-down).
cific bank and the commands shown are those allowed to be issued to that bank when in
that state). Exceptions are covered in the notes below.
Idle:
Row active:
Read:
Write:
MAND INHIBIT or NOP commands, or allowable commands to the other bank, should be
issued on any clock edge occurring during these states. Allowable commands to any other
bank are determined by that bank’s current state.
Precharging:
Row activating:
Read w/auto-
precharge enabled:
Write w/auto-
precharge enabled:
L
L
L
L
L
L
CAS#
X
H
H
H
H
H
H
L
L
L
L
L
L
L
L
WE#
X
H
H
H
H
H
H
L
L
L
L
L
L
L
L
The bank has been precharged, and
A row in the bank has been activated, and
bursts/accesses and no register accesses are in progress.
A READ burst has been initiated with auto precharge disabled and has
not yet terminated or been terminated.
A WRITE burst has been initiated with auto precharge disabled and has
not yet terminated or been terminated.
DESELECT (NOP/continue previous operation)
NO OPERATION (NOP/continue previous operation)
ACTIVE (select and activate row)
AUTO REFRESH
LOAD MODE REGISTER
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (deactivate row in bank or banks)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (truncate READ burst, start PRECHARGE)
BURST TERMINATE
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE (truncate WRITE burst, start PRECHARGE)
Starts with registration of a PRECHARGE command and ends when
t
Starts with registration of an ACTIVE command and ends when
is met. After
Starts with registration of a READ command with auto precharge
enabled and ends when
will be in the idle state.
Starts with registration of a WRITE command with auto precharge
enabled and ends when
will be in the idle state.
RP is met. After
n - 1
34
was HIGH and CKE
t
RCD is met, the bank will be in the row active state.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
RP is met, the bank will be in the idle state.
Command/Action
t
XP has been met (if the previous state was power-
t
t
RP has been met. After
RP has been met. After
n
is HIGH and after
t
RP has been met.
t
Mobile DDR SDRAM
RCD has been met. No data
©2007 Micron Technology, Inc. All rights reserved
t
XSR has been met (if
t
t
RP is met, the bank
RP is met, the bank
Operations
Notes
10, 12
10, 11
8, 11
10
10
10
10
7
7
8
8
9
t
RCD

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