mt46h32m16lf Micron Semiconductor Products, mt46h32m16lf Datasheet - Page 40
mt46h32m16lf
Manufacturer Part Number
mt46h32m16lf
Description
512mb X16, X32 Mobile Ddr Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT46H32M16LF.pdf
(84 pages)
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Figure 7:
PDF: 09005aef82ce3074/Source: 09005aef82ce20c9
ddr_mobile_sdram_cmd_op_timing_dia_fr3.08__3.fm - Rev. D 05/08 EN
Command
BA0, BA1
Address
V
DQS
DD
V
CK#
CKE
A10
DM
DQ
CK
DD
Q
1
Initialize and Load Mode Registers
Notes:
LVCMOS
HIGH LEVEL
Power-up: V
NOP 2
T = 200µs
1. PRE = PRECHARGE command; LMR = LOAD MODE REGISTER command; AR = AUTO REFRESH
2. NOP or DESELECT commands are required for at least 200µs.
3. Other valid commands are possible.
4. NOPs or DESELECTs are required during this time.
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DD
command; ACT = ACTIVE command
and CK stable
t IS
NOP
T0
High-Z
High-Z
t IH
t
CH
t
CK
t
CL
ALL BANKS
t
IS
PRE
T1
t
IH
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RP
4
AR
Ta0
40
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4
Tb0
AR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
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Load standard
mode register
4
t
t
t
Op-code
Op-code
BA0 = L,
IS
IS
IS
BA1 = L
Tc0
LMR
t
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t
IH
IH
IH
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Load extended
mode register
4
Op-code
Op-code
BA0 = L,
BA1 = H
LMR
Td0
Mobile DDR SDRAM
©2007 Micron Technology, Inc. All rights reserved
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MRD
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4
Te0
ACT 3
Row
Row
Bank
Operations
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Don’t Care
NOP 3
Tf0