mt46h32m16lf Micron Semiconductor Products, mt46h32m16lf Datasheet - Page 51

• Manufacturer Part Number: mt46h32m16lf
• Description: 512mb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Figure 14:
PDF: 09005aef82ce3074/Source: 09005aef82ce20c9
ddr_mobile_sdram_cmd_op_timing_dia_fr3.08__3.fm - Rev. D 05/08 EN
Command
Command
Consecutive READ Bursts
Address
Address
Notes:
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
1. D
2. BL = 4, 8, or 16 (if 4, the bursts are concatenated; if 8 or 16, the second burst interrupts the
3. Shown with nominal
4. Example applies only when READ commands are issued to same device.
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
first).
OUT
n (or b) = data-out from column n (or column b).
CL = 2
NOP
NOP
T1
T1
CL = 3
T1n
t
AC,
D
READ
Bank,
n
READ
Bank,
Col b
OUT
Col b
T2
1
T2
t
DQSCK, and
51
D
n + 1
T2n
T2n
OUT
D
D
n + 2
OUT
n
NOP
NOP
T3
OUT
T3
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t
DQSQ.
Don’t Care
D
n + 1
D
T3n
n + 3
T3n
OUT
OUT
D
n + 2
OUT
T4
NOP
D
T4
NOP
OUT
b
D
n + 3
T4n
T4n
OUT
D
b + 1
OUT
Transitioning Data
Mobile DDR SDRAM
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D
T5
T5
NOP
NOP
D
b + 2
OUT
b
OUT
T5n
T5n
D
b + 1
D
b + 3
OUT
OUT
Operations