FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 90

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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Bipolar Power Transistors – General Purpose Transistors (Continued)
TIP31B
BD241C
TIP31C
KSC2233
KSD526
KSD73
KSD362
TIP41
BD243
TIP41A
BD243A
TIP41B
BD243B
TIP41C
BD243C
KSD363
KSD568
KSD569
KSC2334
BU407
BU407H
BU406
BU408
BD533
BD535
BD537
KSE3055T
MJE3055T
KSE44H
TO-220 PNP Configuration
TIP30A
TIP30C
KSA940
BD240
BD240A
Products
I
C
1.5
10
10
10
3
3
3
4
4
5
5
6
6
6
6
6
6
6
6
6
7
7
7
7
7
7
7
8
8
8
1
1
2
2
(A) V
CEO
100
100
100
100
120
100
150
150
200
200
100
150
80
60
80
60
70
40
45
60
60
80
80
60
80
45
60
80
60
60
80
60
45
60
(V) V
CBO
115
100
200
100
150
100
100
300
100
100
150
330
330
400
400
100
150
80
80
40
45
60
60
80
80
45
60
80
70
70
60
55
70
–
(V) V
EBO
5
5
5
5
5
5
8
5
5
5
5
5
5
5
5
8
7
7
7
6
6
6
6
5
5
5
5
5
5
5
5
5
5
5
(V) P
C
40
40
40
40
30
30
40
65
65
65
65
65
65
65
65
40
40
40
40
60
60
60
60
50
50
50
75
75
50
30
30
25
30
30
(W)
Min
10
10
10
30
40
70
20
15
30
15
30
15
30
15
30
40
40
40
40
20
20
15
20
20
60
15
15
40
15
15
–
–
–
–
2-85
Discrete Power Products –
Max
150
240
240
140
240
200
200
240
100
100
140
50
50
75
75
75
75
75
75
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
@I
FE
0.01
0.01
0.01
0.5
0.3
0.3
0.3
0.3
0.5
C
–
–
–
–
3
3
3
1
1
5
3
3
3
3
1
3
3
3
4
4
2
1
1
1
1
(A) @V
10
10
CE
–
–
–
–
4
4
4
5
5
5
4
4
4
4
4
4
4
4
5
1
1
5
5
5
5
4
4
1
4
4
4
4
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.45
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.2
1.2
1.5
1.5
1.5
1.5
1.5
0.5
0.6
0.8
1.1
0.7
1.5
0.7
0.7
1.2
1.5
1.5
1.5
1.5
0.5
0.8
0.8
1.1
0.7
1
2
1
1
1
1
1
1
1
V
CE (sat)
0.5
C
3
3
3
4
3
5
5
6
6
6
6
6
6
6
6
1
5
5
5
5
5
5
6
2
2
2
4
4
8
1
1
1
1
(A) @I
0.375
0.375
0.125
0.125
0.05
0.6
0.4
0.3
0.5
0.5
0.6
0.6
0.6
0.6
0.1
0.5
0.5
0.5
0.5
0.8
0.5
1.2
0.2
0.2
0.2
0.4
0.4
0.4
0.2
0.2
B
1
1
1
1
(A)