FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 31

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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TO-251 (IPAK) (Continued)
FQU30N06
HUF76413D3
HUFA76413D3
FQU20N06L
FQU20N06
HUFA76409D3
HUF76407D3
HUFA76407D3
FQU13N06L
FQU13N06
RFD3055
FDU3580
IRLU110A
HUF76629D3
HUFA76629D3
HUF76619D3
HUFA76619D3
HUF75617D3
HUFA75617D3
IRFU130A
HUF76609D3
HUFA76609D3
FQU13N10
FQU13N10L
IRFU120A
FQU7N10L
IRFU110A
FDU2572
HUF75829D3
FQU18N20V2
FQU12N20
FQU10N20
FQU10N20C
FQU10N20L
IRFU230B
FQU7N20
IRFU220B
FQU4N20
IRFU210B
FQU9N25
Products
Min. (V)
BV
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
150
150
200
200
200
200
200
200
200
200
200
200
250
60
60
60
60
60
60
60
60
60
60
60
80
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.045
0.049
0.049
0.063
0.063
0.092
0.092
0.029
0.052
0.052
0.085
0.085
0.054
10V
0.06
0.11
0.14
0.15
0.09
0.09
0.11
0.16
0.16
0.18
0.18
0.35
0.11
0.14
0.28
0.36
0.36
0.36
0.69
0.42
0.2
0.4
0.4
0.8
1.4
1.5
–
R
DS(ON)
0.075@5V
0.033@6V
0.075@6V
0.14@5V
0.44@5V
0.38@5V
0.38@5V
0.2@5V
4.5V
0.056
0.056
0.071
0.107
0.107
0.054
0.054
0.087
0.087
0.165
0.165
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-26
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
1.8V
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
11.5
13.5
15.5
9.5
9.4
9.4
4.8
5.8
5.5
8.7
4.6
8.5
7.2
19
17
17
12
10
35
38
38
24
24
18
18
27
13
13
12
16
26
31
20
18
20
13
22
12
8
5
= 5V
I
D
22.7
17.2
16.8
7.7
4.7
8.4
5.8
4.7
7.6
7.8
7.6
7.5
5.3
4.6
2.7
7.4
20
12
11
12
20
18
16
10
10
18
20
18
12
10
20
18
16
13
10
10
29
15
9
3
(A)
MOSFETs
P
D
110
110
135
110
44
60
60
38
38
49
38
38
28
28
53
42
22
75
75
64
64
41
49
49
40
40
32
25
20
83
55
51
50
51
50
45
40
30
26
55
(W)