FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 60

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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TO-263 (D
FQB6N15
FQB5N15
IRLW640A
IRLW630A
IRLW620A
IRLW610A
FQB34N20
FQB34N20L
FQB32N20C
IRFW650B
FDB2670
FQB19N20L
FQB19N20
FQB19N20C
IRFW640B
FQB12N20
FQB12N20L
FQB10N20
FQB10N20C
FQB10N20L
FQB630
IRFW630B
FQB7N20
FQB7N20L
IRFW620B
FQB5N20
FQB5N20L
FQB4N20L
FQB4N20
IRFW610B
FQB27N25
IRFW654B
FQB16N25
FQB16N25C
IRFW644B
FQB9N25
IRFW634B
FQB8N25
FQB6N25
Products
2
PAK) (Continued)
Min. (V)
BV
150
150
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
250
250
250
250
250
250
250
250
250
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.075
0.075
0.082
0.085
10V
0.13
0.14
0.15
0.17
0.18
0.28
0.28
0.36
0.36
0.36
0.69
0.75
1.35
0.11
0.14
0.23
0.27
0.28
0.42
0.45
0.55
0.8
0.4
1.2
1.5
0.6
0.4
0.8
1.2
1.4
–
–
–
–
1
0.18@5V
0.08@5V
0.15@5V
0.32@5V
0.38@5V
0.78@5V
1.25@5V
0.4@5V
0.8@5V
1.5@5V
1.4@5V
R
4.5V
DS(ON)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-55
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
18.6
10.3
82.5
40.5
13.5
15.5
6.5
5.4
6.1
6.8
4.8
7.2
6.6
40
60
55
95
27
27
31
45
18
16
20
13
19
22
12
50
95
27
41
47
29
12
8
6
4
5
= 5V
I
D
19.4
11.6
11.6
25.5
15.6
6.4
5.4
3.3
9.5
6.6
6.5
4.5
4.5
3.8
3.6
3.3
9.4
8.1
5.5
18
31
31
28
28
19
21
19
18
10
10
15
16
14
9
5
9
9
5
8
(A)
MOSFETs
P
D
110
180
180
156
156
140
140
139
139
180
156
142
139
139
63
54
69
39
33
93
90
90
87
72
87
78
72
63
63
47
52
52
45
45
38
90
74
87
63
(W)