FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 38

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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TO-252 (DPAK) (Continued)
IRFR224B
FQD4N25
IRFR214B
FQD7N30
FQD5N30
FQD3N30
FQD2N30
FQD6N40C
IRFR330B
FQD6N40
FQD5N40
IRFR320B
FQD3N40
IRFR310B
FQD2N40
FQD6N50C
FQD5N50C
IRFR430B
FQD5N50
IRFR420B
FQD4N50
FQD2N50
FQD1N50
FQD5N60C
SSR4N60B
FQD3N60
FQD2N60
FQD2N60C
SSR2N60B
FQD1N60
FQD1N60C
SSR1N60B
FQD2N80
FQD1N80
FQD2N90
FQD2N100
FQD3P50
FQD1P50
FQD4P40
TO-252(DPAK) P-Channel
Products
Min. (V)
BV
1000
-500
-500
-400
250
250
250
300
300
300
300
400
400
400
400
400
400
400
400
500
500
500
500
500
500
500
500
600
600
600
600
600
600
600
600
600
800
800
900
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
10V
1.75
1.15
1.75
11.5
11.5
10.5
1.1
0.7
0.9
2.2
3.7
1.6
3.4
3.4
5.8
1.3
1.4
1.5
1.8
2.6
2.7
5.3
2.5
2.5
3.6
4.7
4.7
6.3
7.2
4.9
3.1
12
20
10
2
1
1
9
5
R
DS(ON)
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-33
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
1.8V
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
13.5
12.5
4.3
8.1
9.8
5.5
3.7
7.7
8.5
4.8
5.9
5.5
13
16
25
13
10
14
19
18
25
13
14
10
15
22
10
12
12
12
18
11
18
6
4
6
4
9
5
= 5V
I
D
3.8
2.2
5.5
4.4
2.4
1.7
4.5
4.5
4.2
3.4
3.1
1.7
1.4
4.5
3.5
3.5
2.3
2.6
1.6
1.1
2.8
2.8
2.4
1.9
1.8
0.9
1.8
1.7
1.7
2.1
1.2
2.7
3
2
4
2
1
1
1
(A)
MOSFETs
P
D
2.5
37
25
50
45
30
25
48
48
50
45
41
30
26
25
61
48
48
50
41
45
30
25
49
49
50
45
44
44
30
28
28
50
45
50
50
50
38
50
(W)