FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 37

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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TO-252 (DPAK) (Continued)
HUFA76609D3S
FQD13N10
FQD13N10L
IRFR120A
FQD7N10L
IRFR110A
FDD2572
FDD2582
FDD2570
HUF75829D3S
FDD120AN15A0
FQD16N15
FQD14N15
FDD2512
FQD5N15
IRLR230A
IRLR220A
IRLR210A
FDD2670
FQD18N20V2
HUF75925D3ST
FQD12N20
FQD12N20L
FQD10N20
FQD10N20C
FQD10N20L
FQD630
IRFR230B
FQD7N20
FDD2612
FQD7N20L
IRFR220B
FQD5N20
FQD5N20L
FQD4N20L
IRFR210B
FQD9N25
IRFR234B
FQD8N25
FQD6N25
Products
Min. (V)
BV
100
100
100
100
100
100
150
150
150
150
150
150
150
150
150
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
250
250
250
250
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.054
0.066
0.275
10V
0.16
0.18
0.18
0.35
0.08
0.11
0.12
0.16
0.21
0.42
0.13
0.14
0.28
0.28
0.36
0.36
0.36
0.69
0.72
0.75
1.35
0.42
0.45
0.55
0.2
0.4
0.8
0.4
0.4
0.8
1.2
1.2
1.5
–
–
–
1
R
DS(ON)
0.075@6V
0.099@6V
0.38@5V
0.09@6V
0.17@6V
0.47@6V
0.32@5V
0.38@5V
0.78@5V
1.25@5V
0.2@5V
0.4@5V
0.8@5V
1.5@5V
1.4@5V
0.165
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-32
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
1.8V
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
11.2
18.6
10.3
13.5
15.5
GS
8.7
4.6
8.5
5.4
6.1
6.8
4.8
7.2
6.6
13
12
16
26
19
39
31
23
18
27
20
32
18
16
20
13
19
22
12
29
12
8
8
8
6
4
= 5V
I
D
11.8
8.4
5.8
4.7
4.7
6.7
4.3
7.5
4.6
2.7
3.6
7.6
7.8
7.6
7.5
5.3
4.9
5.5
4.6
3.8
3.8
3.2
2.7
7.4
6.6
6.2
4.4
10
10
10
29
21
18
14
10
15
11
9
9
7
(A)
MOSFETs
P
D
135
110
100
49
40
40
32
25
20
95
70
65
55
50
42
30
48
33
21
70
83
55
55
51
50
51
46
50
45
42
45
40
37
37
30
26
55
49
50
45
(W)