FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 122

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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MMBF5486
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MMBFJ310
MMBF5458
MMBF5459
MMBF4393
MMBF4392
MMBF4416
MMBF4391
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MMBFJ112
MMBF4416A
MMBFJ111
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MMBF4118
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Products
BV
(V)
25
20
25
25
25
25
25
25
25
25
25
25
25
30
30
30
30
35
35
35
35
40
40
40
40
40
40
40
40
40
40
40
GDS
Dissipation
Power
(mW)
1000
100
225
225
225
350
225
350
225
225
350
350
350
350
350
225
350
350
350
225
350
350
225
350
225
350
250
350
225
250
350
350
P
D
Min (V)
4.5
0.3
0.5
2.5
0.5
0.5
2.5
0.5
0.3
0.6
1.2
0.8
0.8
–
–
1
1
2
4
2
1
2
2
4
1
3
1
1
2
2
2
5
Typ (V) Max (V) @ I
0.6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
GS
1.5
4.5
6.5
1.5
1.8
2.7
10
10
10
10
3
3
4
4
6
6
6
7
8
3
5
6
3
5
6
3
4
4
5
6
6
7
(off)
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
500
D
1
1
1
1
1
(µA) @ V
2-117
Discrete Power Products –
15
15
15
10
15
15
15
15
10
15
15
20
20
15
20
15
20
10
15
10
20
15
20
10
15
20
20
DS
5
5
5
5
5
(V) Min (mA) Max (mA) @V
0.005
0.15
0.03
0.08
500
0.2
0.9
0.2
12
15
24
25
50
20
10
20
15
30
1
2
4
7
1
8
2
4
5
2
5
5
8
8
0.015
0.35
0.09
0.24
150
100
4.5
I
0.6
15
10
30
20
20
40
60
16
30
75
15
40
80
DSS
–
5
5
9
–
–
–
1
–
–
–
15
15
15
15
10
15
15
15
15
10
15
15
20
20
15
20
15
15
15
15
20
10
15
10
20
15
20
10
15
20
20
DS
5
(V) Min (mS) Max (mS)
Bipolar Transistors and JFETs
0.07
0.08
3.5
1.5
4.5
7.5
0.1
10
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
3
4
6
1
4
7
8
2
GFS
0.21
0.25
0.33
5.5
7.5
12
20
12
12
18
15
–
–
6
7
5
8
6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
R
(Ω)
100
100
60
30
50
30
60
80
50
30
3
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
DS
I
0.0001
0.0001
0.0001
0.0002
0.0002
0.0002
D
0.003
0.001
0.001
0.001
(µA)
(off)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–