FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 159

MOSFET N-CH 250V 3.6A I2PAK

FQI4N25TU

Manufacturer Part Number
FQI4N25TU
Description
MOSFET N-CH 250V 3.6A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQI4N25TU

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.6A
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.6 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
 Details
www.fairchildsemi.com
Transient Voltage Suppressors (Continued)
SMBJ30A
SMBJ30CA
SMBJ33A
SMBJ33CA
SMBJ36A
SMBJ36CA
SMBJ40A
SMBJ40CA
SMBJ43A
SMBJ43CA
SMBJ45A
SMBJ45CA
SMBJ48A
SMBJ48CA
SMBJ51A
SMBJ51CA
SMBJ54A
SMBJ54CA
SMBJ58A
SMBJ58CA
SMBJ60A
SMBJ60CA
SMBJ64A
SMBJ64CA
SMBJ70A
SMBJ70CA
SMBJ75A
SMBJ75CA
SMBJ78A
SMBJ78CA
SMBJ85A
SMBJ85CA
SMBJ90A
SMBJ90CA
SMBJ100A
Products
Voltage (V)
Stand-off
Reverse
V
100
RWM
30
30
33
33
36
36
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
V
33.3
33.3
36.7
36.7
44.4
44.4
47.8
47.8
53.3
53.3
56.7
56.7
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
Min
100
100
111
40
40
50
50
60
60
BR
Voltage (V)
Breakdown
Max
36.8
36.8
40.6
40.6
44.2
44.2
49.1
49.1
52.8
52.8
55.3
55.3
58.9
58.9
62.7
62.7
66.3
66.3
71.2
71.2
73.7
73.7
78.6
78.6
92.1
92.1
95.8
95.8
104
104
111
111
123
86
86
Condition
I
T
Test
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Voltage @ I
Max Clamping
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
2-154
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
103
113
113
121
121
126
126
137
137
146
146
162
V
C
PPM
(V)
Discrete Power Products –
Surge Current (A)
Max Peak Pulse
I
12.4
12.4
11.3
11.3
10.3
10.3
PPM
9.3
9.3
8.6
8.6
8.3
8.3
7.8
7.8
7.3
7.3
6.9
6.9
6.4
6.4
6.2
6.2
5.8
5.8
5.3
5.3
4.8
4.8
4.4
4.4
4.1
4.1
3.7
5
5
Leakage @ V
I
R
Max Reverse
(µA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
RWM
Diodes and Rectifiers
P
PPM
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
(W)
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Direction

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