FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 54

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

www.fairchildsemi.com
TO-262 (I
FQI5N80
FQI4N80
FQI3N80
FQI2N80
FQI6N90
FQI5N90
FQI4N90
FQI3N90
FQI2NA90
FQI2N90
FQI3P50
FQI1P50
FQI4P40
FQI2P40
FQI9P25
SFI9644
FQI6P25
SFI9634
SFI9624
FQI2P25
SFI9614
FQI12P20
SFI9640
FQI7P20
SFI9630
FQI5P20
FQI3P20
SFI9610
FQI15P12
FQI17P10
SFI9540
FQI12P10
SFI9530
FQI8P10
SFI9520
FQI5P10
SFI9510
FQI47P06
TO-262(I
Products
2
PAK) P-Channel
2
PAK) (Continued)
Min. (V)
BV
-500
-500
-400
-400
-250
-250
-250
-250
-250
-250
-250
-200
-200
-200
-200
-200
-200
-200
-120
-100
-100
-100
-100
-100
-100
-100
-100
800
800
800
800
900
900
900
900
900
900
-60
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.026
10V
4.25
10.5
0.62
0.47
0.69
0.19
0.29
0.53
1.05
2.6
3.6
6.3
1.9
2.3
3.1
5.8
7.2
4.9
3.1
6.5
0.8
1.1
1.3
2.4
0.5
0.8
1.4
2.7
0.2
0.2
0.3
0.6
1.2
5
4
4
3
R
DS(ON)
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-49
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.5
6.3
25
19
15
12
40
31
24
20
15
12
18
11
18
10
29
45
21
29
16
31
46
19
29
10
29
30
43
21
30
12
16
84
9
6
9
9
= 5V
I
D
11.5
16.5
11.5
10.5
4.8
3.9
2.4
5.8
5.4
4.2
3.6
2.8
2.2
2.7
1.5
3.5
9.4
8.6
2.7
2.3
1.6
7.3
6.5
4.8
2.8
1.8
4.5
3.6
11
15
17
47
3
2
6
5
8
6
(A)
MOSFETs
P
D
140
130
107
167
158
140
130
107
120
123
120
123
100
100
132
160
85
85
85
63
85
63
90
70
38
52
20
90
70
75
52
20
75
66
65
49
40
32
(W)