FDD86113LZ Fairchild Semiconductor, FDD86113LZ Datasheet
FDD86113LZ
Available stocks
Related parts for FDD86113LZ
FDD86113LZ Summary of contents
Page 1
... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDD86113LZ FDD86113LZ ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev. C ® MOSFET General Description = 4.2 A This N-Channel logic Level MOSFETs are produced using D Fairchild Semiconductor‘s advanced Power Trench = 3.4 A that has been special tailored to minimize the on-state resistance D and yet maintain superior switching performance ...
Page 2
... Starting ° mH The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μ ...
Page 3
... 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev °C unless otherwise noted 3 μ 2 400 300 200 100 50 75 ...
Page 4
... V GATE TO SOURCE VOLTAGE ( Figure 11. Gate Leakage Current vs Gate to Source Voltage ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev °C unless otherwise noted J 1000 100 ...
Page 5
... Figure 13. Single Pulse Maximum Power Dissipation 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0. Figure 14. ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev °C unless otherwise noted PULSE WIDTH (sec) SINGLE PULSE 4.3 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Case Transient Thermal Response Curve ...
Page 6
... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDD86113LZ Rev. C ® tm ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...