FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 164

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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Zener Diodes
DO-35
1N4678
1N4679
1N4680
1N4370A
1N4681
1N5221B
1N5985B
BZX79C2V4
BZX55C2V4
1N5222B
1N4682
1N4371A
1N5223B
1N5986B
BZX55C2V7
BZX79C2V7
1N5224B
1N4372A
1N5225B
1N5987B
BZX55C3V0
BZX79C3V0
1N5226B
1N5988B
1N746A
BZX55C3V3
BZX79C3V3
1N4683
1N5227B
1N5989B
1N747A
BZX55C3V6
BZX79C3V6
1N5228B
Products
V
Z
Voltage (V)
Nominal Zener
2.42
2.57
1.8
2.2
2.4
2.4
2.4
2.4
2.4
2.5
2.7
2.7
2.7
2.7
2.7
2.8
3.3
3.3
3.3
3.3
3.3
3.6
3.6
3.6
3.6
3.6
3.6
3.9
2
3
3
3
3
3
Dissipation (W)
P
D
Total Device
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
2-159
Discrete Power Products –
Maximum Z
Bold = New Products (introduced January 2003 or later)
100
100
100
100
30
30
85
30
30
30
85
30
29
29
95
85
95
28
95
28
85
85
24
90
24
85
85
23
–
–
–
–
–
–
Z
(Ω)
Diodes and Rectifiers