FDMS86250 Fairchild Semiconductor, FDMS86250 Datasheet
FDMS86250
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FDMS86250 Summary of contents
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... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS86250 FDMS86250 ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev. C ® MOSFET General Description This N-Channel MOSFET is produced using Fairchild = 6 Semiconductor’s advanced Power Trench = 5 been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...
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... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting mH ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C ...
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... 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev °C unless otherwise noted 5 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 4 ...
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... MAX RATED J 0. 125 C/W θ 0.001 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev °C unless otherwise noted J 5000 V = 1000 V = 100 100 C J ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec ...
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... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev www.fairchildsemi.com ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS86250 Rev. C ® tm ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...