FDMS3008SDC Fairchild Semiconductor, FDMS3008SDC Datasheet
FDMS3008SDC
Related parts for FDMS3008SDC
FDMS3008SDC Summary of contents
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... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 3008S FDMS3008SDC ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C TM ® PowerTrench SyncFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’ Advancements in both silicon and Dual Cool ...
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... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source-Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev 25°C unless otherwise noted J Test Conditions mA mA, referenced to 25°C D ...
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... As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. ≤ di/dt ≤ 210 A/μs, V ≤ Starting DSS ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev °C/W when mounted pad copper 2 pad copper 2 pad copper ...
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... DUTY CYCLE = 0.5% MAX 150 125 J 100 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev 25°C unless otherwise noted J μ s 1.5 2 100 125 150 200 100 0.1 0. -55 ...
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... J 0 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev 25°C unless otherwise noted J 5000 = 15 V 1000 100 150 120 100 ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0005 - Figure 13. ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev 25°C unless otherwise noted J SINGLE PULSE C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve ...
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... TIME (ns) Figure 14. FDMS3008SDC SyncFET body diode reverse recovery characteristic ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C (continued) Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device. 0.01 0.001 μ ...
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... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C 8 www.fairchildsemi.com ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C ® * PDP SPM™ Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ ...