FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 44

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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TO-220 (Continued)
FQP50N06L
FQP50N06
RFP50N06
HUF76429P3
HUFA76429P3
FDP5690
HUF76423P3
HUFA76423P3
HUF76419P3
HUFA76419P3
FQP30N06L
FQP30N06
HUFA76413P3
FQP20N06L
FQP20N06
HUFA76409P3
HUF76407P3
HUFA76407P3
FQP13N06L
FQP13N06
RFP3055
FDP047AN08A0
FDP060AN08A0
FDP16AN08A0
HUF75545P3
HUFA75545P3
HUF75542P3
HUFA75542P3
FQP90N08
FQP70N08
FQP58N08
FQP44N08
FQP24N08
FQP17N08L
FQP17N08
FQP9N08
FQP9N08L
IRL540A
IRL530A
Products
Min. (V)
BV
100
100
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
75
75
75
80
80
80
80
80
80
80
80
80
80
80
80
80
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.0047
0.021
0.022
0.022
0.022
0.022
0.027
0.035
0.035
0.035
0.049
0.055
0.062
0.092
0.092
0.135
0.006
0.016
0.014
0.014
0.016
0.017
0.024
0.034
0.115
10V
0.03
0.03
0.04
0.06
0.11
0.15
0.01
0.01
0.06
0.21
0.21
0.1
–
–
0.0087@6V
0.025@5V
0.032@6V
0.045@5V
0.029@6V
0.115@5V
0.058@5V
0.07@5V
0.14@5V
0.01@6V
0.23@5V
0.12@5V
R
4.5V
0.025
0.025
0.035
0.035
0.056
0.107
0.107
DS(ON)
0.04
0.04
0.07
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-39
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
24.5
11.5
38.4
16.9
105
105
9.5
9.4
9.4
4.8
5.8
8.8
5.9
4.7
31
67
38
38
23
28
28
22
22
15
19
17
12
10
92
99
28
80
80
84
75
50
38
19
12
= 5V
I
D
13.6
16.5
16.5
9.3
9.3
52
50
50
47
47
32
35
35
29
29
32
30
23
21
20
18
13
13
13
12
80
80
58
75
75
75
75
71
70
57
44
24
28
14
(A)
MOSFETs
P
D
121
120
131
110
110
310
285
135
270
270
230
230
160
155
146
127
121
85
75
79
60
53
38
45
53
75
65
40
62
58
85
75
79
53
49
38
45
65
40
(W)