FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 211

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

www.fairchildsemi.com
Discrete
IGBT Module
FM M 7G 30 U S 60 S
(Continued)
N
S: Single Phase, Blank: Three Phase
Low/High Side Option for Chopper Module (L, H)
M: 24PM Series
G: 7PM-G Series
S: 25PM Series
C: 21PM Series
Assignment of Current Sensing Pin (N, I)
Economic Current Rating: E
AC Power Input Option
Voltage Rating (x 10)
Short Circuit Rated
Ultrafast Switching Speed (U)
Low Saturation Voltage (L)
Current Rating
Number of Built-in IGBT (1G, 2G, 6G, 7G)
Module Package Type
Fairchild Module
8-18
Ordering Guides