FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 209

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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Discrete
Discrete IGBT (SMPS I)
HGT G
12
(Continued)
N 60
A
4
D
D: Integral Reverse Diode
S: Surface Mount
C: Current Sense
V: Voltage Clamping
1: First Generation
2: Second Generation
3: Third Generation
4: SMPS
N: NPT
A: 100ns
B: 200ns
C: 500ns
i.e., (600, 1200)
N-Channel or P-Channel
Rating at T
Rating at T
D: 3 Lead TO-251/TO-252
1S: 3 Lead TO-262/TO-263
P: 3 Lead TO-220
G: 3 Lead TO-247
1Y: 3-Lead TO-264
Options
Max Fall Time At T
Voltage Breakdown/10
Polarity
SMPS Rated Current
Gen. 1, 2, 3 Continuous Current
Package
Fairchild
C
C
= +75°C 100kHz Operation
= +110°C
8-16
J
= +150°C
E: ≤ 1µs
F: ≤ 2µs
G: ≤ 5µs
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