FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 130

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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TO-220
RHRP860
RHRP1560
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RHRP8120
RHRP15120
RHRP30120
TO-247
RHRG1560CC
RHRG3060
RHRG3060CC
RHRG5060
RHRG30120
RHRG75120
TO-252(DPAK)
RHRD660S
Products
Common Cathode
Common Cathode
Configuration
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
V
RRM
1200
1200
1200
1200
1200
600
600
600
600
600
600
600
600
(V)
I
F (AV)
15
30
15
30
15
30
30
50
30
75
8
8
6
(A)
V
F
2-125
Max (V)
2.1
2.1
2.1
3.2
3.2
1.5
2.1
2.1
2.1
3.2
3.2
2.1
3
Discrete Power Products –
t
rr
Max (ns)
100
35
40
45
70
75
75
60
45
45
50
75
35
I
RM
or I
(µA)
100
100
100
100
100
250
100
100
100
250
100
250
100
R
Max
t
a
Typ (ns)
Diodes and Rectifiers
@125°C
18
20
22
30
36
35
30
22
22
25
48
60
16
t
b
Typ (ns)
@125°C
10
15
18
20
28
33
17
18
18
20
22
25
8