FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 199

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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Discrete
MOSFET: DMOS
FD S
6680
S
C: Complementary N & P
N: N-Channel
P: P-Channel
S: SyncFET
Z: Zener gate protection
N3: FLMP (3 source leads)
N7: FLMP (7 source leads)
F: Fast Body Diode
B: TO-263
C: SuperSOT-6
D: TO-252
G: SC70-6
H: TO-247
I: TO-262
M: MicroFET
N: SuperSOT-3
Additional Information
DIE Number
Package
Fairchild DMOS
P: TO-220
Q: SO-14
R: SuperSOT-8
S: SO-8
T: SOT-223
U: TO-251
W: TSSOP-8
Z: BGA
}
8-6
Only on packages small than SO-8
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