FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 200

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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Discrete
MOSFET: UltraFET
H UF
75
(Continued)
3 45 S3 S T
®
P3: TO-220 ( 3 Lead)
G3: TO-247 (3 Lead)
S3: T-262/TO-263 (3 Lead)
D3: TO-251/TO-252 (3 Lead)
T3: SOT-223 (3 Lead)
R3: SOT-23 (3 Lead)
DK8: Dual SO-8 (6 Lead)
SK8: Single SO-8 (8 Lead)
CK8: Complementary SO-8 (8 Lead)
0: 20V
1: 30V
2: 40/50V
3: 55V
4: 60V
5: 80V
6: 100V
7: 120V
8: 150V
9: 200V
75: Standard 10V Gate
76: Logic Level 5V Gate
77: Low Logic Level 2.7V Gate
Tape & Reel
Surface Mount
Package
DIE Size
UltraFET
Fairchild
®
Series
8-7
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