FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 146

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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Bridge Rectifiers (Continued)
GBPC2510
GBPC35005
GBPC3501
GBPC3502
GBPC3504
GBPC3506
GBPC3508
GBPC3510
GGBU4A
GBU4B
GBU4D
GBU4G
GBU4J
GBU4K
GBU4M
GBU6A
GBU6B
GBU6D
GBU6G
GBU6J
GBU6K
GBU6M
GBU8A
GBU8B
GBU8D
GBU8G
GBU8J
GBU8K
KBL005
KBL01
KBL02
KBL04
KBL06
GBU
KBL
Products
V
RRM
1000
1000
1000
1000
100
200
400
600
800
100
200
400
600
800
100
200
400
600
800
100
200
400
600
800
100
200
400
600
50
50
50
50
50
(V)
I
F(AV)
25
35
35
35
35
35
35
35
2-141
4
4
4
4
4
4
4
6
6
6
6
6
6
6
8
8
8
8
8
8
4
4
4
4
4
(A)
Discrete Power Products –
V
FM
Max (V)
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Diodes and Rectifiers