FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 14
![MOSFET N-CH 250V 3.6A I2PAK](/photos/26/99/269905/i2pak_sml.jpg)
FQI4N25TU
Manufacturer Part Number
FQI4N25TU
Description
MOSFET N-CH 250V 3.6A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI4N25TU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.6A
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.6 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
Details
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www.fairchildsemi.com
SuperSOT™-6/TSOP-6 FLMP
FDC6000NZ
FDC796N
FDC3616N
FDC6036P
FDC697P
FDC699P
FDC6020C
SSOT-6/TSOP-6 FLMP N-Channel
SSOT-6/TSOP-6 FLMP P-Channel
SSOT-6/TSOP-6 FLMP Complementary N- and P-Channel
Products
Min. (V)
-20 | 20
BV
100
-20
-20
-20
20
30
DSS
Complementary
Config.
Single
Single
Single
Single
Dual
Dual
0.009
10V
0.07
–
–
–
–
–
R
0.055 | 0.027 0.082 | 0.039
DS(ON)
0.08@6V
0.012
0.044
0.022
4.5V
0.02
0.02
Max (Ω) @ V
2-9
0.028
0.064
0.025
2.5V
0.03
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
0.095
1.8V
0.035
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
7 | 6
GS
14
23
10
39
27
8
= 5V
-4.2 | 5.9
I
D
12.5
7.3
3.7
5
8
7
(A)
MOSFETs
P
D
1.6
1.8
1.6
2
2
2
2
(W)
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