SM2G50US60 Fairchild Semiconductor, SM2G50US60 Datasheet
SM2G50US60
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SM2G50US60 Summary of contents
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... SM2G50US60 FEATURES High Speed Switching Low Conduction Loss : V (sat) = 2.1 V (typ) CE Fast & Soft Anti-Parallel FWD Short circuit rated : Min 10uS at Tc=100 APPLICATIONS General Purpose Inverters Welding Machine Induction Heating UPS , CVCF Robotics , Servo Controls ABSOLUTE MAXIMUM RATINGS ( Symbol Characteristics V Collector-Emitter Voltage ...
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... SM2G50US60 ELECTRICAL CHARACTERISTICS (IGBT PART =25 ,Unless Otherwise Specified) c Symbol Characteristics Breakdown Voltage CES V Temperature Coeff. of CES/ T Breakdown Voltage threshold voltage GE(th) I Collector cutoff Current CES leakage Current GES V (sat) Collector to Emitter CE saturation voltage Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance ...
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... SM2G50US60 ELECTRICAL CHARACTERISTICS (DIODE PART =25 ,Unless Otherwise Specified) c Symbol Characteristics V Diode Forward Voltage FM Trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge THERMAL RESISTANCE Symbol Characteristics ~ R JC Junction-to-Case(IGBT Part, Per 1/2 Module Junction-to-Case(DIODE Part, Per 1/2 Module) ...
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... SM2G50US60 160 15V 20V 120 COLLECTOR-EMITTER VOLTAGE V 160 Common Emitter Vge = 15V 120 COLLECTOR-EMITTER VOLTAGE V 160 13V 120 12V 11V V = 10V GE Common Emitter [V] CE 160 120 125 [V] CE IGBT MODULE 15V 20V COLLECTOR-EMITTER VOLTAGE V Common Emitter Vce = GATE-EMITTER VOLTAGE V Preliminary 13V ...
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... SM2G50US60 16 Common Emitter GATE-EMITTER VOLTAGE 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse 1E Rectangular Pulse Duration [sec] 100 [V] GE IGBT Stage 0.01 1E IGBT MODULE 16 Common Emitter Tc = 125 GATE-EMITTER VOLTAGE 0.5 0.2 DIODE Stage 0.1 0.1 0.05 0.02 0.01 single pulse ...
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... SM2G50US60 160 Common Cathode Vge = 0V 120 FORWARD VOLTAGE V 400 Common Emitter + =25 300 200 100 100 CHARGE Q 10000 125 1000 [ 150 200 [nC] G IGBT MODULE Common Emitter Vge = 1Mhz 100 1 COLLECTOR-EMITTER VOLTAGE V 4.0 Vcc = 300V + 3 125 3.0 2.5 2.0 1.5 1.0 0.5 ...
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... SM2G50US60 5 Vcc = 300V Ic = 50A GATE - EMITTER RESISTANCE Common Cathode di/dt = -100A FORWARD CURRENT I Esw Eon Eoff 60 80 100 + ] 0.5 Trr Irr 0.1 & & 125 0. [A] F Preliminary IGBT MODULE 4 Vcc = 300V + Vge = 15V CASE TEMPERATURE T COMMON EMITTER Vcc = 300V Vge = d(off) ...
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... SM2G50US60 0.1 Common Emitter Vcc = 300V Vge = 15V + Rg =13 t d(on 0.01 10 COLLECTOR CURRENT I 0.5 Common Emitter Vcc = 300V Vge = 15V Ic = 50A 0.1 0.01 10 GATE RESISTANCE R 0.9 Common Emitter Vcc = 300V Vge = Ic = 50A 0 125 0.05 50 100 (A) C 300 t d(on) Ic MAX. (Pulsed) 100 Ic MAX ...
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... SM2G50US60 & 200 Tj 125 Vge = 15V + 150 100 100 200 300 COLLECTOR-EMITTER VOLTAGE V 7-PM-AA 400 500 600 700 [ ( ( * Preliminary IGBT MODULE L Vcc Rg +/- 15V 90% 10% Vge Vce 90% 10% Ic Td(off) Td(on Inductive Load Test Circuit and Waveforms = Unit : mm ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. TM ACEX TM CoolFET TM CROSSVOLT TM E2CMOS TM FACT TM FACT Quiet Series FAST TM FASTr TM GTO TM HiSeC DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN ...