FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 63

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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TO-263 (D
FQB5P20
SFW9620
FQB3P20
SFW9610
FQB15P12
FQB34P10
FQB22P10
FQB17P10
SFW9540
FQB12P10
SFW9530
FQB8P10
SFW9520
FQB5P10
SFW9510
FQB47P06
FQB27P06
FQB17P06
SFW9Z34
FQB11P06
SFW9Z24
SFW2955
FQB7P06
SFW9Z14
FDB6021P
NDB6020P
FDB4020P
Products
2
Min. (V)
PAK) (Continued)
BV
-200
-200
-200
-200
-120
-100
-100
-100
-100
-100
-100
-100
-100
-100
-100
-60
-60
-60
-60
-60
-60
-60
-60
-60
-20
-20
-20
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.125
0.026
0.175
10V
0.19
0.29
0.53
1.05
0.07
0.12
0.14
0.28
0.41
1.4
1.5
2.7
0.2
0.2
0.3
0.6
1.2
0.3
0.5
–
–
–
–
3
R
4.5V
DS(ON)
0.03
0.05
0.08
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-58
0.075 | 0.07@2.7V
2.5V
0.04
0.11
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
0.065
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.3
6.3
9.5
10
15
29
85
40
30
43
21
30
12
16
84
33
21
30
13
15
15
20
25
6
9
9
9
= 5V
I
D
-33.5
16.5
11.5
10.5
11.4
4.8
3.5
2.8
1.8
4.5
3.6
9.7
9.4
6.7
15
22
17
47
27
17
18
28
24
16
8
6
7
(A)
MOSFETs
P
D
37.5
100
155
125
100
132
160
120
75
38
52
20
75
66
65
49
40
32
79
82
53
49
49
45
38
37
60
(W)