FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 143

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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Schottky Diodes and Rectifiers (Continued)
FYPF0545S
FYPF1004DN
FYPF1010DN
FYPF1045DN
FYPF1504DN
FYPF1545DN
FYPF2004DN
FYPF2006DN
FYPF2010DN
FYPF2045DN
MBR3035PT
MBR3045PT
MBR3050PT
MBR3060PT
MBR4035PT
MBR4045PT
MBR4050PT
MBR4060PT
FYD0504SA
MBRA3045N
TO-220F
TO-247
TO-252(DPAK)
TO-3P
Products
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Function
Configuration
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Single
Single
I
100
100
100
150
200
150
200
200
200
200
400
400
400
400
200
(A)
FSM
80
80
80
80
80
2-138
(°C/W)
R
60
60
60
60
60
60
60
60
θJA
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
V
100
100
RRM
(V)
45
40
45
40
45
40
60
45
35
45
50
60
35
45
50
60
40
45
Bold = New Products (introduced January 2003 or later)
I
F (AV)
(A)
10
10
10
15
15
20
20
20
10
30
30
30
30
40
40
40
40
30
5
5
V
Diodes and Rectifiers
FM
0.55
0.55
0.75
0.55
0.55
0.55
0.55
0.58
0.77
0.55
0.76
0.76
0.75
0.75
0.72
0.72
0.55
(V)
0.7
0.7
0.8
Max
(µA) @V
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
5000
5000
1000
1000
1000
1000
1000
1000
100
I
RM
Max
100
100
45
40
45
40
45
40
60
45
35
45
50
60
35
45
50
60
40
45
R
(V)