FDMS3016DC Fairchild Semiconductor, FDMS3016DC Datasheet

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FDMS3016DC

Manufacturer Part Number
FDMS3016DC
Description
Manufacturer
Fairchild Semiconductor
Datasheet
©2010 Fairchild Semiconductor Corporation
FDMS3016DC Rev.C
FDMS3016DC
N-Channel Dual Cool
30 V, 49 A, 6.0 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
dv/dt
P
T
R
R
R
R
R
R
R
D
DS
GS
AS
D
J
θJC
θJC
θJA
θJA
θJA
θJA
θJA
Dual Cool
Max r
Max r
High performance technology for extremely low r
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
3016
TM
= 6.0 mΩ at V
= 9.0 mΩ at V
Top Side Cooling PQFN package
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Top
GS
GS
FDMS3016DC
= 10 V, I
= 4.5 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
Power 56
TM
D
D
= 12 A
= 10 A
D
PowerTrench
T
A
D
= 25°C unless otherwise noted
D
Parameter
Dual Cool
DS(on)
Pin 1
D
Bottom
Package
TM
1
Power 56
S
T
T
T
T
T
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s
Advancements in both silicon and Dual Cool
technologies have been combined to offer the lowest r
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
C
C
C
A
A
S
®
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation
S
MOSFET
G
Reel Size
(Bottom Drain)
(Top Source)
13’’
D
D
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1k)
D
D
(Note 1i)
(Note 1j)
(Note 3)
(Note 4)
advanced
5
6
7
8
Tape Width
12 mm
-55 to +150
PowerTrench
Ratings
200
±20
3.3
5.7
2.1
1.3
30
49
78
18
72
60
38
81
16
23
11
www.fairchildsemi.com
®
4
1
3
2
3000 units
July 2010
TM
Quantity
G
S
S
S
process.
package
Units
°C/W
V/ns
DS(on)
mJ
°C
W
V
V
A

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FDMS3016DC Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 3016 FDMS3016DC ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev.C TM ® PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’ Advancements in both silicon and Dual Cool ...

Page 2

... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 ° ...

Page 3

... mH ≤ di/dt ≤ 100 A/μs, V ≤ Starting DSS ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev °C/W when mounted pad copper 2 pad copper 2 pad copper 2 pad copper 2 pad copper ...

Page 4

... DUTY CYCLE = 0.5%MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev 25°C unless otherwise noted 3. 100 125 150 ...

Page 5

... MAX RATED J 0. C/W θ 0.001 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev 25°C unless otherwise noted J 3000 1000 V = 15V 20V DD 100 ...

Page 6

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0005 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev 25°C unless otherwise noted J SINGLE PULSE C/W θ RECTANGULAR PULSE DURATION (sec ...

Page 7

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev.C 4 www.fairchildsemi.com ...

Page 8

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev.C F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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