FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 12

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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SuperSOT™-3/SOT-23 (Continued)
FDN304PZ
FDN302P
FDN340P
FDN342P
FDN338P
FDN308P
FDN336P
NDS356P
NDS332P
NDS352P
FDN306P
Products
Min. (V)
BV
-20
-20
-20
-20
-20
-20
-20
-20
-20
-20
-12
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
10V
–
–
–
–
–
–
–
–
–
R
DS(ON)
0.052
0.055
0.115
0.125
4.5V
0.07
0.08
0.04
0.2
0.3
Max (Ω) @ V
2-7
0.41@2.7V
0.155
2.5V
0.07
0.08
0.11
0.13
0.19
0.27
0.05
GS
=
Replaced by NDS356AP
Replaced by NDS352AP
Bold = New Products (introduced January 2003 or later)
1.8V
0.08
0.1
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.3
4.4
3.8
3.6
3.7
12
12
9
8
= 5V
I
D
2.4
2.4
1.6
1.5
1.2
2.6
2
2
1
(A)
MOSFETs
P
D
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
(W)