FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 204
![MOSFET N-CH 250V 3.6A I2PAK](/photos/26/99/269905/i2pak_sml.jpg)
FQI4N25TU
Manufacturer Part Number
FQI4N25TU
Description
MOSFET N-CH 250V 3.6A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI4N25TU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.6A
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.6 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
Details
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Discrete
STEALTH
ISL 9
R
TM
15 60
(Continued)
Rectifier
G2
P2: TO-220 (2 Lead)
G2: TO-247 (2 Lead)
G3: TO-247 (3 Lead)
S3: TO-263 (D
D3: TO-251/252 (DPAK) (2 Lead)
i.e., (600, 1200)
R: Rectifier
K: Common Cathode
Package
Voltage Breakdown/10
Current Rating
Configuration
Discrete Power
Fairchild
2
PAK)
8-11
5A3: TO-247ST
IY3: TO-264
IN4: SOT-227
P3: TO-220 (3 Lead)
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