FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 20

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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SO-8
RF1K49090
RF1K49211
FDS6898A
FDS6898AZ
FDS6894A
FDS6894AZ
FDS6890A
FDS6892A
FDS6892AZ
FDS6812A
FDS9926A
FDS6574A
FDS6572A
FDS6570A
SI4466DY
NDS8426A
NDS8425
FDS8926A
RF1K49088
FDS6982
FDS6990A
FDS6912A
FDS8936A
FDS6912
HUF76113DK8
FDS6930A
NDS9936
HUF76105DK8
NDS9956A
FDS6961A
FDS6982S
FDS6984S
FDS6994S
FDS6986S
FDS6900S
SO-8 N-Channel
Products
Min. (V)
30 | 30
30 | 30
30 | 30
30 | 30
30 | 30
30 | 30
BV
12
12
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
30
30
30
30
30
30
30
30
30
30
30
30
DSS
(MOSFET & SyncFET)
(MOSFET & SyncFET)
(MOSFET & SyncFET)
(MOSFET & SyncFET)
(MOSFET & SyncFET)
Config.
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
0.015 | 0.028
0.016 | 0.028
0.021 | 0.015
0.019 | 0.04
0.029 | 0.02
0.03 | 0.022
0.018
0.028
0.028
0.028
0.032
10V
0.04
0.05
0.08
0.09
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
R
DS(ON)
0.026 | 0.0175
0.022 | 0.035
0.028 | 0.055
0.038 | 0.028
0.037 | 0.029
0.02 | 0.035
2-15
0.0075
0.0075
0.0135
0.014
0.017
0.018
0.018
0.006
0.022
0.023
0.043
4.5V
0.014
0.017
0.018
0.022
0.006
0.035
0.042
0.055
0.078
0.03
0.03
0.04
0.11
0.14
Max (Ω) @ V
0.016@2.7V
0.028@2.7V
0.018
0.018
0.022
0.024
0.024
0.035
0.043
0.007
0.008
0.038
2.5V
GS
0.02
0.02
0.01
0.01
Replaced by NDS9925A
Replaced by FDS6930A
Replaced by FDS6930A
Bold = New Products (introduced January 2003 or later)
Replaced by NDS8425
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
=
Discrete Power Products –
0.009
1.8V
0.03
0.03
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Q
@V
g
17.5 | 8.5
18.5 | 8.5
6.5 | 11
Typ. (nC)
11 | 5
8 | 25
8 | 12
GS
19.8
6.2
5.8
8.4
5.3
9.5
2.1
16
16
17
14
23
12
12
12
75
57
47
47
43
11
12
19
7
5
= 5V
8.6 | 6.3
8.5 | 5.5
6.9 | 8.2
6.9 | 8.2
8.6 | 6.3
6.5 | 7.9
I
D
10.5
9.4
9.4
7.5
7.5
7.5
6.7
6.5
7.4
5.5
7.5
5.5
3.7
3.5
16
16
15
15
8
8
6
6
6
6
5
(A)
MOSFETs
P
D
2.5
2.5
2.5
2.5
2.5
2.5
1.6
1.6
2.5
2.5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
(W)