FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 86

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

www.fairchildsemi.com
Bipolar Power Transistors – Dynamic Focus Transistors
TO-126 NPN Configuration
KSC5042M
TO-220F NPN Configuration
KSC5042F
Products
V
CBO
1500
1500
(V) V
CEO
900
900
(V) V
EBO
5
5
(V) I
C
0.1
0.1
(A)
P
C
(W)
4
6
Min
30
30
2-81
Discrete Power Products –
Max
–
–
h
FE
@I
0.01
0.01
C
(A) @V
CE
5
5
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
–
–
5
5
V
CE
(sat)
0.02
0.02
C
(A) @I
0.004
0.004
B
(A)
Datash
DS9008
DS9008
17.pdf
16.pdf
eet