FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 192
![MOSFET N-CH 250V 3.6A I2PAK](/photos/26/99/269905/i2pak_sml.jpg)
FQI4N25TU
Manufacturer Part Number
FQI4N25TU
Description
MOSFET N-CH 250V 3.6A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI4N25TU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.6A
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.6 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
Details
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Surface Mount
Note: Refer to individual product datasheet for specific product package dimensions
Bold = preferred package
Discrete
PDF links for all the packaging information is at: http://www.fairchildsemi.com/products/discrete/packaging/pkg.html
SOT-23 (TO-236AB)
SOT-23 (TO-236AB)
SOT-23
SOT-89
SOT-223
Package Name
(Continued)
Prefixes Suffixes
MMBTH
MMBTH
MMBFJ
MMBTA
MMBFJ
MMBTA
MMBF
MMBF
MMBT
MMBT
BCW
BCW
NDS
NDS
PZTA
BCV
BCX
BSR
BSS
FDV
BCV
BCX
BSR
BSS
FDV
KSC
KSA
KSR
KSK
BCP
BSP
NDT
KST
FDT
FZT
NZT
PZT
(Continued)
2N
2N
BA
BC
BA
BC
BC
MOSFET
X
X
X
Bipolar
X
X
X
X
X
Products
Diode
X
X
X
X
7-6
JFETs
X
X
X
IGBT
Pkg Method
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
(MTF)
Packaging Standard
Qty (pcs)
2.5K
10K
3K
3K
4K
Packaging Information
Reel Dia
(inch)
13
13
13
13
7
Tape Width
8 ± 0.3
(mm)
12
12
8
8
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