FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 167

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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Zener Diodes (Continued)
1N6002B
1N759A
1N963B
BZX55C12
BZX79C12
1N5243B
1N6003B
1N964B
BZX55C13
BZX79C13
1N4701
1N5244B
1N5245B
1N6004B
1N965B
BZX55C15
BZX79C15
1N5246B
1N6005B
1N966B
BZX55C16
BZX79C16
1N5247B
1N5248B
1N6006B
1N967B
BZX55C18
BZX79C18
1N5249B
1N5250B
1N6007B
1N968B
BZX55C20
BZX79C20
1N5251B
Products
V
Z
Voltage (V)
Nominal Zener
13.3
12
12
12
12
12
13
13
13
13
13
14
15
15
15
15
15
16
16
16
16
16
17
18
18
18
18
18
19
20
20
20
20
20
22
Dissipation (W)
P
D
Total Device
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
2-162
Discrete Power Products –
Maximum Z
Bold = New Products (introduced January 2003 or later)
11.5
22
30
20
20
13
25
13
26
26
15
16
32
16
30
30
17
36
17
40
40
19
21
42
21
50
50
23
25
48
25
55
55
29
–
Z
(Ω)
Diodes and Rectifiers