FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 62

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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TO-263 (D
FQB8N60C
SSW7N60B
FQB6N60
FQB5N60
FQB6N60C
FQB4N60
FQB5N60C
SSW4N60B
FQB2N60
SSW2N60B
FQB1N60
SSW1N60B
FQB6N70
FQB6N80
FQB5N80
FQB4N80
FQB3N80
FQB2N80
FQB5N90
FQB4N90
FQB3N90
FQB2NA90
FQB2N90
FQB3P50
FQB1P50
FQB4P40
FQB2P40
FQB9P25
SFW9644
FQB6P25
FQB4P25
SFW9624
FQB2P25
SFW9614
FQB12P20
SFW9640
FQB7P20
SFW9630
TO-263(D
Products
2
PAK) P-Channel
2
PAK) (Continued)
Min. (V)
BV
-500
-500
-400
-400
-250
-250
-250
-250
-250
-250
-250
-200
-200
-200
-200
600
600
600
600
600
600
600
600
600
600
600
600
700
800
800
800
800
800
900
900
900
900
900
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
10V
11.5
1.95
4.25
10.5
0.62
0.47
0.69
1.2
2.2
2.5
3.6
6.3
3.1
5.8
6.5
0.8
2.1
1.2
1.5
2.5
4.7
1.5
2.6
2.3
7.2
4.9
3.1
1.1
2.4
0.5
0.8
12
2
2
5
5
4
4
R
4.5V
DS(ON)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-57
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
12.5
5.9
6.5
28
38
20
16
16
15
15
22
30
31
25
19
15
12
31
24
20
15
12
18
11
18
10
29
45
21
10
16
31
46
19
29
9
5
9
= 5V
I
D
11.5
7.5
6.2
5.5
4.4
4.5
2.4
1.2
6.2
5.8
4.8
3.9
2.4
5.4
4.2
3.6
2.8
2.2
2.7
1.5
3.5
9.4
8.6
2.7
2.3
1.6
7.3
6.5
11
7
5
4
2
1
3
2
6
4
(A)
MOSFETs
P
D
147
147
130
120
125
106
100
100
142
158
140
130
107
158
140
130
107
120
123
120
123
64
54
40
34
85
85
85
63
85
63
90
75
38
52
20
90
70
(W)