HD6417144F50V Renesas Electronics America, HD6417144F50V Datasheet - Page 723

IC SUPERH MCU ROMLESS 112QFP

HD6417144F50V

Manufacturer Part Number
HD6417144F50V
Description
IC SUPERH MCU ROMLESS 112QFP
Manufacturer
Renesas Electronics America
Series
SuperH® SH7144r
Datasheet

Specifications of HD6417144F50V

Core Processor
SH-2
Core Size
32-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, SCI
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
74
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
112-QFP
For Use With
HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK7145 - DEV EVALUATION KIT SH7145
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD6417144F50V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
* Use a t
Note: 6. Write Pulse Width
Number of Writes n
Notes: 1. Data transfer is performed by byte transfer. The lower 8 bits of the start address to be written to must be H'00 or H'80.
Reprogram Data Computation Table
1000
Wait (tsp10, tsp30, or tsp200) μs
998
999
Write pulse application subroutine
10
11
12
13
sp
1
2
3
4
5
6
7
8
9
Original Data
10 write pulse for additional programming.
Clear PSU bit in FLMCR1
Reprogram data storage
Additional-programming
Set PSU bit in FLMCR1
Clear P bit in FLMCR1
Program data storage
2. Verify data is read in 32-bit (longword) units.
3. Reprogram data is determined by the operation shown in the table below (comparison between the data stored in the program data area and the verify data). Bits for
4. A 128-byte area for the storage of programming data, a 128-byte area for the storage of reprogramming data, and a 128-byte area for the storage of additional-
5. A write pulse of 30 μs or 200 μs is applied according to the progress of the programming operation. See note 6 for details of the pulse widths. When writing of
7. The wait times and value of N are shown in section 26.5, Flash Memory Characteristics.
Set P bit in FLMCR1
(D)
data storage area
Apply Write Pulse
area (128 bytes)
area (128 bytes)
0
0
1
1
A 128-byte data transfer must be performed even if writing fewer than 128 bytes; in this case, H'FF data must be written to the extra addresses.
which the reprogram data is 0 are programmed in the next reprogramming loop. Therefore, even bits for which programming has been completed will be subjected to
programming once again if the subsequent verify operation ends in failure.
programming data must be provided in RAM. The contents of the reprogram data area and additional-program data area are modified as programming proceeds.
additional-programming data is executed, a 10 μs write pulse should be applied. Reprogram data X' means reprogram data when the write pulse is applied.
Wait (t
Wait (t
(128 bytes)
Enable WDT
Disable WDT
Wait (t
End Sub
RAM
spsu
cpsu
Write Time (tsp) μs
cp
Verify Data
) μs
) μs
) μs
t
t
t
t
t
t
t
t
t
t
(V)
t
t
t
t
t
t
sp
sp
sp
sp
sp
sp
sp
sp
sp
sp
0
1
0
1
sp
sp
sp
sp
sp
sp
Figure 19.9 Program/Program-Verify Flowchart
200
200
200
200
200
200
200
200
200
200
30
30
30
30
30
30
Reprogram Data
Increment address
*
*
Start of programming
*
End of programming
*
(X)
7
5
7
7
1
0
1
1
*
7
Programming completed
Programming incomplete;
reprogram
Still in erased state; no action
Successively write 128-byte data from additional-
programming data area in RAM to flash memory
Apply Write Pulse (tsp10) (Additional programming)
Successively write 128-byte data from reprogram
data area in RAM to flash memory
NG
Transfer reprogram data to reprogram data area
Comments
Additional-programming data computation
Store 128-byte program data in program
Transfer additional-programming data to
data area and reprogram data area
Apply
additional-programming data area
H'FF dummy write to verify address
Clear SWE bit in FLMCR1
Reprogram data computation
data verification completed?
Set SWE bit in FLMCR1
Clear PV bit in FLMCR1
Start of programming
Set PV bit in FLMCR1
Write Pulse (tsp30 or tsp200)
End of programming
Wait (t
Wait (t
Read verify data
Wait (t
Wait (t
Wait (t
Write data =
verify data?
OK
OK
OK
128-byte
m = 0 ?
START
6 ≥ n ?
m = 0
n = 1
6
sswe
cswe
spvr
cpv
spv
Additional-Programming Data Computation Table
n?
Reprogram Data
OK
OK
Sub-Routine-Call
) μs
) μs
) μs
) μs
) μs
(X')
0
0
1
1
NG
NG
NG
Verify Data
Rev.4.00 Mar. 27, 2008 Page 677 of 882
*
NG
*
*
*
7
See note *6 for pulse width
*
*
7
7
2
(V)
3
7
0
1
0
1
*
*
4
*
1
1
m = 1
19. Flash Memory (F-ZTAT Version)
*
*
4
4
Perform programming in the erased state.
Do not perform additional programming
on previously programmed addresses.
Clear SWE bit in FLMCR1
Programming Data (Y)
Programming failure
Wait (t
Additional-
n ≥ N?
0
1
1
1
cswe
OK
) μs
*
7
Additional programming
to be executed
Additional programming
not to be executed
Additional programming
not to be executed
Additional programming
not to be executed
NG
n ← n + 1
Comments
*
Reprogram
7
REJ09B0108-0400

Related parts for HD6417144F50V