ATMEGA16M1-MU Atmel, ATMEGA16M1-MU Datasheet - Page 305

• Manufacturer Part Number: ATMEGA16M1-MU
• Description: IC MCU AVR 16K FLASH 32VQFN
• Manufacturer: Atmel
• Series: AVR® ATmegar

Specifications of ATMEGA16M1-MU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: CAN, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
• Program Memory Size: 16KB (8K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 11x10b; D/A 1x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-VQFN Exposed Pad, 32-HVQFN, 32-SQFN, 32-DHVQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Number Of I /o: -

Table 27-18. Serial Programming Instruction Set
8209D–AVR–11/10
Instruction
Programming Enable
Chip Erase
Read Program Memory
Load Program Memory Page
Write Program Memory Page
Read EEPROM Memory
Write EEPROM Memory
Load EEPROM Memory
Page (page access)
Write EEPROM Memory
Page (page access)
Read Lock bits
Write Lock bits
Read Signature Byte
Write Fuse bits
Figure 27-11. Serial Programming Waveforms
1010 1100
1010 1100
0010 H000
0100 H000
0100 1100
1010 0000
1100 0000
1100 0001
1100 0010
0101 1000
1010 1100
0011 0000
1010 1100
SERIAL DATA OUTPUT
SERIAL CLOCK INPUT
Byte 1
SERIAL DATA INPUT
SAMPLE
(MOSI)
(MISO)
0101 0011
100x xxxx
000a aaaa
000x xxxx
000a aaaa
000x xxaa
000x xxaa
0000 0000
00xx xxaa
0000 0000
111x xxxx
000x xxxx
1010 0000
(SCK)
Byte 2
Instruction Format
MSB
MSB
xxxx xxxx
xxxx xxxx
bbbb bbbb
xxbb bbbb
bbxx xxxx
bbbb bbbb
bbbb bbbb
0000 00bb
bbbb bb00
xxxx xxxx
xxxx xxxx
xxxx xxbb
xxxx xxxx
Byte 3
xxxx xxxx
xxxx xxxx
oooo oooo
iiii iiii
xxxx xxxx
oooo oooo
iiii iiii
iiii iiii
xxxx xxxx
xxoo oooo
11ii iiii
oooo oooo
iiii iiii
ATmega16M1/32M1/64M1
Byte 4
Operation
Enable Serial Programming after
RESET goes low
Chip Erase EEPROM and Flash
Read H (high or low) data o from
Program memory at word address a:b
Write H (high or low) data i to Program
Memory page at word address b. Data
low byte must be loaded before Data
high byte is applied within the same
address
Write Program Memory Page at
address a:b
Read data o from EEPROM memory at
address a:b
Write data i to EEPROM memory at
address a:b
Load data i to EEPROM memory page
buffer. After data is loaded, program
EEPROM page
Write EEPROM page at address a:b
Read Lock bits. “0” = programmed, “1”
= unprogrammed. See
page 287
Write Lock bits. Set bits = “0” to
program Lock bits. See
page 287
Read Signature Byte o at address b
Set bits = “0” to program, “1” to
unprogram. See
293
for details
for details
for details
Table 27-14 on page
Table 27-1 on
Table 27-1 on
LSB
LSB
305