ATMEGA16M1-MU Atmel, ATMEGA16M1-MU Datasheet - Page 294

• Manufacturer Part Number: ATMEGA16M1-MU
• Description: IC MCU AVR 16K FLASH 32VQFN
• Manufacturer: Atmel
• Series: AVR® ATmegar

Specifications of ATMEGA16M1-MU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: CAN, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
• Program Memory Size: 16KB (8K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 11x10b; D/A 1x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-VQFN Exposed Pad, 32-HVQFN, 32-SQFN, 32-DHVQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Number Of I /o: -

27.9
27.9.1
27.9.2
27.9.3
294
Parallel Programming
ATmega16M1/32M1/64M1
Enter Programming Mode
Considerations for Efficient Programming
Chip Erase
The following algorithm puts the device in Parallel (High-voltage) > Programming mode:
If the rise time of the Vcc is unable to fulfill the requirements listed above, the following alterna-
tive algorithm can be used.
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”.
1. Set Prog_enable pins listed in Table 27-12. to “0000”, RESET pin to “0” and Vcc to 0V
2. Apply 4.5V - 5.5V between VCC and GND. Ensure that Vcc reaches at least 1.8V within
3. Wait 20µs - 60µs, and apply 11.5V - 12.5V to RESET
4. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has
5. Wait at least 300µs before giving any parallel programming commands
6. Exit Programming mode by power the device down or by bringing RESET pin to 0V
1. Set Prog_enable pins listed in
2. Apply 4.5V - 5.5V between VCC and GND
3. Monitor Vcc, and as soon as Vcc reaches 0.9V - 1.1V, apply 11.5V - 12.5V to RESET
4. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has
5. Wait until Vcc actually reaches 4.5V - 5.5V before giving any parallel programming
6. Exit Programming mode by power the device down or by bringing RESET pin to 0V
• The command needs only be loaded once when writing or reading multiple memory locations
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
1. Set XA1, XA0 to “10”. This enables command loading
2. Set BS1 to “0”
3. Set DATA to “1000 0000”. This is the command for Chip Erase
4. Give XTAL1 a positive pulse. This loads the command
EESAVE Fuse is programmed) and Flash after a Chip Erase
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading
the next 20µs
been applied to ensure the Prog_enable Signature has been latched
and Vcc to 0V
been applied to ensure the Prog_enable Signature has been latched
commands
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed
Table 27-12 on page 293
(1)
memories plus Lock bits. The Lock bits are
to “0000”, RESET pin to “0”
8209D–AVR–11/10