T-8110L AGERE [Agere Systems], T-8110L Datasheet - Page 124
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T-8110L
Manufacturer Part Number
T-8110L
Description
Manufacturer
AGERE [Agere Systems]
Datasheet
1.T-8110L.pdf
(164 pages)
- Current page: 124 of 164
- Download datasheet (3Mb)
Ambassador T8110L H.100/H.110 Switch
13 Electrical Characteristics
13.1 Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage; the table below shows abso-
lute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess
of those given in the operational sections of this data sheet. Exposure to absolute maximum ratings for extended
periods can adversely affect device reliability.
Table 99. Absolute Maximum Ratings
13.1.1 Handling Precautions
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid expo-
sure to electrostatic discharge (ESD) during handling and mounting. Agere employs a human-body model (HBM)
and a charged-device model (CDM) for ESD-susceptibility testing and protection design evaluation. ESD voltage
thresholds are dependent on the circuit parameters used to define the model. No industry-wide standard has been
adopted for CDM. However, a standard HBM (resistance = 1500 W, capacitance = 100 pF) is widely used and,
therefore, can be used for comparison purposes. The T8110L has a HBM ESD threshold voltage rating of 1500 V
minimum.
13.2 Crystal Specifications
13.2.1 XTAL1 Crystal
The T8110L requires a 16.384 MHz clock source derived from an oscillator or a crystal. If a crystal is used it has to
be a 16.384 MHz crystal and must be connected between the XTAL1_IN and the XTAL1_OUT pins. External 24 pF,
5% capacitors must be connected from XTAL1_IN and XTAL1_OUT to Vss, as shown in the diagram below.
The ±32 ppm tolerance is the suggested value if the oscillator is used as the clocking source while mastering the
bus. Otherwise, a crystal with a lesser tolerance can be used. The crystal specifications are shown below.
Table 100. XTAL1 Specifications
124
Supply Voltage
XTAL1_IN, XTAL2_IN, XTAL1_OUT, XTAL2_OUT pins
Voltage Applied to I/O Pins
Operating Temperature
Storage Temperature
Frequency
Oscillation Mode
Effective Series Resistance
Load Capacitance
Shunt Capacitance
Frequency Tolerance and Stability
Parameter
Parameter
Fundamental, parallel resonance
50
7 pF maximum
16.384 MHz
32 ppm
Value
18 pF
maximum
Symbol
V
T
—
—
—
DD
stg
V
SS
Min
–40
–55
V
—
– 0.3
SS
XTAL1_OUT
XTAL1_IN
T8110L
V
DD
Max
1 M
V
125
4.2
85
DD
Agere Systems Inc.
5.5
February 2004
16.384 MH
CRYSTAL
24 pF
24 pF
Z
Unit
°C
°C
V
V
V
5-6390f(c)
V
SS
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