MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 97

• Manufacturer Part Number: MT41J256M4HX-15E:D TR
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M4HX-15E:D TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-FBGA
• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 220mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 59: Derating Values for
Table 60: Derating Values for
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
Slew Rate
Slew Rate
ADDR
ADDR
CMD/
CMD/
V/ns
V/ns
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Δ
Δ
n/a
n/a
n/a
n/a
n/a
68
45
63
42
11
4.0 V/ns
4.0 V/ns
t
0
2
3
6
9
t
0
4
6
IS
IS
Δ
Δ
–10
–16
–26
–10
–16
n/a
n/a
n/a
n/a
n/a
50
34
50
34
–4
–4
t
t
0
0
IH
IH
AC135 Threshold: V
AC125 Threshold: V
Δ
Δ
n/a
n/a
n/a
n/a
n/a
68
45
63
42
11
3.0 V/ns
3.0 V/ns
t
t
0
2
3
6
9
0
4
6
IS
IS
Δ
Δ
–10
–16
–26
–10
–16
n/a
n/a
n/a
n/a
n/a
50
34
–4
50
34
–4
t
0
t
0
t
t
IH
IH
IS/
IS/
t
t
Δ
Δ
IH – AC135/DC100-Based
IH – AC125/DC100-Based
Δ
Δ
t
t
n/a
n/a
n/a
n/a
n/a
IS, Δ
IS, Δ
68
45
63
42
11
2.0 V/ns
2.0 V/ns
t
0
2
3
6
9
t
0
4
6
IS
IS
IH(AC)
IH(AC)
t
t
IH Derating (ps) – AC/DC-Based
IH Derating (ps) – AC/DC-Based
Δ
Δ
–10
–16
–26
–10
–16
Command and Address Setup, Hold, and Derating
n/a
n/a
n/a
n/a
n/a
50
34
–4
50
34
–4
t
t
0
0
IH
IH
= V
CK, CK# Differential Slew Rate
= V
CK, CK# Differential Slew Rate
REF(DC)
REF(DC)
Δ
Δ
n/a
n/a
n/a
n/a
n/a
76
53
10
11
14
17
71
50
12
14
19
1.8 V/ns
1.8 V/ns
t
t
8
8
IS
IS
97
+ 135mV, V
+ 125mV, V
Δ
Δ
–18
n/a
n/a
n/a
n/a
n/a
58
42
58
42
–2
–8
–2
–8
t
t
8
4
8
4
IH
IH
Δ
Δ
n/a
n/a
n/a
n/a
n/a
Micron Technology, Inc. reserves the right to change products or specifications without notice.
84
61
16
18
19
22
25
79
58
16
20
22
27
1.6 V/ns
1.6 V/ns
t
t
IS
IS
IL(AC)
IL(AC)
Δ
Δ
–10
n/a
n/a
n/a
n/a
n/a
66
50
16
12
66
50
16
12
t
t
6
0
6
0
IH
IH
1Gb: x4, x8, x16 DDR3 SDRAM
= V
= V
REF(DC)
REF(DC)
Δ
Δ
n/a
n/a
n/a
n/a
n/a
92
69
24
26
27
30
33
87
66
24
28
30
35
1.4 V/ns
t
1.4 V/ns
t
IH
IH
Δ
Δ
- 135mV
- 125mV
n/a
n/a
n/a
n/a
n/a
74
58
24
20
14
74
58
24
20
14
–2
t
t
8
8
IH
IH
© 2006 Micron Technology, Inc. All rights reserved.
Δ
Δ
100
n/a
n/a
n/a
n/a
n/a
77
32
34
35
38
41
95
74
32
36
38
43
1.2 V/ns
1.2 V/ns
t
t
IS
IS
Δ
Δ
n/a
n/a
n/a
n/a
n/a
84
68
34
30
24
18
84
68
34
30
24
18
t
t
8
IH
IH
Δ
Δ
108
103
n/a
n/a
n/a
n/a
n/a
85
40
42
43
46
49
82
40
44
45
51
1.0 V/ns
1.0 V/ns
t
t
IS
IS
Δ
Δ
100
100
n/a
n/a
n/a
n/a
n/a
84
50
46
40
34
24
84
50
46
40
34
t
t
IH
IH