MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 62

• Manufacturer Part Number: MT41J256M4HX-15E:D TR
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M4HX-15E:D TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-FBGA
• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 220mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

34 Ohm Output Driver Impedance
Table 36: 34 Ohm Driver Impedance Characteristics
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
MR1[5,1]
Pull-up/pull-down mismatch (MM
0,1
34.3Ω
R
ON
Notes:
The 34Ω driver (MR1[5, 1] = 01) is the default driver. Unless otherwise stated, all timings
and specifications listed herein apply to the 34Ω driver only. Its impedance R
fined by the value of the external reference resistor RZQ as follows: R
nominal RZQ = 240Ω ±1%) and is actually 34.3Ω ±1%.
Resistor
R
R
1. Tolerance limits assume RZQ of 240Ω (±1%) and are applicable after proper ZQ calibra-
2. Measurement definition for mismatch between pull-up and pull-down (MM
3. For IT and AT (1Gb only) devices, the minimum values are derated by 6% when the de-
ON34(PD)
ON34(PU)
tion has been performed at a stable temperature and voltage (V
Refer to 34 Ohm Output Driver Sensitivity (page 64) if either the temperature or the
voltage changes after calibration.
ure both R
MM
vice operates between –40°C and 0°C (T
PUPD
PUPD
)
=
Ron
ON(PU)
0.2/V
0.5/V
0.8/V
0.2/V
0.5/V
0.8/V
0.5/V
Ron
PU
V
OUT
- Ron
and R
NOM
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
PD
ON(PD)
× 100
62
–10%
Min
at 0.5 × V
0.6
0.9
0.9
0.9
0.9
0.6
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DDQ
C
).
:
Nom
1.0
1.0
1.0
1.0
1.0
1.0
n/a
1Gb: x4, x8, x16 DDR3 SDRAM
Output Driver Impedance
Max
1.1
1.1
1.4
1.4
1.1
1.1
10
© 2006 Micron Technology, Inc. All rights reserved.
DDQ
ON34
= V
RZQ/7
RZQ/7
RZQ/7
RZQ/7
RZQ/7
RZQ/7
Units
DD
%
= RZQ/7 (with
, V
PUPD
SSQ
ON
). Meas-
is de-
= V
Notes
2
SS
).