MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 159

• Manufacturer Part Number: MT41J256M4HX-15E:D TR
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M4HX-15E:D TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-FBGA
• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 220mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
DQS to DQ output timing is shown in Figure 78 (page 160). The DQ transitions be-
tween valid data outputs must be within
DQS must also maintain a minimum HIGH and LOW time of
the READ preamble, the DQ balls either will be floating or terminated depending on the
status of the ODT signal.
Figure 79 (page 161) shows the strobe-to-clock timing during a READ. The crossing
point DQS, DQS# must transition within ±
out has no timing relationship to clock, only to DQS, as shown in Figure 79 (page 161).
Figure 79 (page 161) also shows the READ preamble and postamble. Typically, both
DQS and DQS# are High-Z to save power (V
DQS is driven LOW and DQS# is HIGH for
The READ postamble,
ing the READ postamble, DQS is driven LOW and DQS# is HIGH. When complete, the
DQ will either be disabled or will continue terminating depending on the state of the
ODT signal. Figure 84 (page 165) demonstrates how to measure
t
RPST, is one half clock from the last DQS, DQS# transition. Dur-
159
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
DQSQ of the crossing point of DQS, DQS#.
t
t
DQSCK of the clock crossing point. The data
RPRE. This is known as the READ preamble.
DDQ
1Gb: x4, x8, x16 DDR3 SDRAM
). Prior to data output from the DRAM,
t
© 2006 Micron Technology, Inc. All rights reserved.
QSH and
t
RPST.
t
QSL. Prior to